GaN Transistors
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| Сравнить | Партномер | Производитель | Категория | Описание | Документы | Аналоги |
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| GaN Transistors | Qorvo's TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC to 18 GHz. The TGF2023-2-02 typically provides 40.1 dBm of saturated output power with power gain of 21 dB at 3 GHz. The maximum power added efficiency is 73.3% which makes the TGF2023-2-02 appropriate for high efficiency applications. The part is lead-free and RoHS compliant. Typical Applications Broadband Wireless Military Space Product Categories Products> Discrete Transistors> GaN HEMTs Application Categories Applications> Defense & Aerospace> Communications Applications> Defense & Aerospace> Electronic Warfare Applications> Defense & Aerospace> Radar | Даташит4 | ||||
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