Results forMJD122

适用于通用放大器和低速开关应用。

NPN 集电极—发射极电压(Vceo)：100V 集电极电流(Ic)：5A 功率(Pd)：65W 集电极-发射极饱和电压(VCE(sat1)@Ic,Ib)：2V@3A,12mA 直流电流增益(hFE@Ic,Vce)：1000@0.5A,3V，工作温度：+150℃@(Tj)

晶体管类型：NPN，集电极电流：8A，集射极击穿电压：100V，耗散功率：20W，适用于线性及开关应用。

TO-252封装NPN达林顿晶体管，适用于中功率线性开关，高直流电流增益，内置阻尼二极管

达林顿类型：NPN。 集电极电流IC:5A 集电极-基极击穿电压VCBO:100V 集电极-发射极击穿电压VCEO:100V

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD122 (NPN) and MJD127 (PNP) are complementary devices. Product services, tools and other useful resources related to MJD122 Find and compare products, get support and connect with onsemi sales team. Note: The temperature and confidence level may be adjusted to your requirements. Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

MJD122 TO-252双极晶体管

功率达林顿晶体管

TRANS NPN DARL 100V 8A DPAK

TRANS NPN DARL 100V 8A TO251