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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage100 V
Collector current8 AMax
DC current gain10004A
Power20 WMax
Power
Current - Collector Cutoff (Max)10µA
Current - Collector (Ic) (Max)8 A
Power - Max20 W
Voltage - Collector Emitter Breakdown (Max)100 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 4A, 4V
Frequency - Transition-
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C(TJ)
PackageBulk
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageTO-251 (IPAK)
Other
Base Product NumberMJD122
MfrSTMicroelectronics
Product StatusActive
Series-
Transistor TypeNPN - Darlington
Vce Saturation (Max) @ Ib, Ic4V @ 80mA, 8A

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