Results forAPT30M85BVR

MOSFET N-CH 300V 40A TO247

台积电流片，长电科技封装；TO247；N—Channel沟道；500V；50A；RDS(ON)=80(mΩ)@VGS=10V,VGS=±30VVth=3.8V；采用SJ_Multi-EPI技术

Power MOS V® can still provide the best trade-off between performance and cost in some applications. Power MOS V® utilizes a low resistance aluminum metal gate structure. This allows for faster gate signal propagation than is possible with conventional polysilicon gate structures. The result is extremely low internal chip equivalent gate resistances (EGR) that are up to an order of magnitude lower than competitive devices which enables uniform high speed switching across the entire chip.