VBsemi(微碧半导体)China
APT30M85BVR-VB
Transistors - FETs, MOSFETs - Single台积电流片，长电科技封装；TO247；N—Channel沟道；500V；50A；RDS(ON)=80(mΩ)@VGS=10V,VGS=±30VVth=3.8V；采用SJ_Multi-EPI技术
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View full reportTechnical parameters
Key specs
Drain-source voltage500 V
Continuous drain current40 A
On-resistance80 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 500V |
| 连续漏极电流(Id) | 40A |
| Other | |
| 导通电阻(RDS(on)) | 80mΩ@10V |
| 耗散功率(Pd) | 530W |