Microchip TechnologyUnited States
Power MOS V® can still provide the best trade-off between performance and cost in some applications. Power MOS V® utilizes a low resistance aluminum metal gate structure. This allows for faster gate signal propagation than is possible with conventional polysilicon gate structures. The result is extremely low internal chip equivalent gate resistances (EGR) that are up to an order of magnitude lower than competitive devices which enables uniform high speed switching across the entire chip.
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View full reportTechnical parameters
| Power | |
|---|---|
| Continuous Drain Current Max (Ampere) | 40 |
| Drain Source Voltage Max V (volt) | 300 |
| Power Dissipation (W) [max] | 300 |
| Environment and package | |
| Package | TO-247-3 |
| Other | |
| Input Capacitance (pF) [Typ] | 4100 |
| On-State Resistance (milliohms) [max] (mΩ) | 85 |
| Part Type | MOSFET |
| Reverse Recovery Charge (Qrr) (µC) [Typ.] | 6 |
| Technology | MOS V |
| Total Gate Charge (nC) [Typ] | 130 |
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