GaN Transistors
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- TGF2023-2-02
GaN Transistors
Qorvo's TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC to 18 GHz. The TGF2023-2-02 typically provides 40.1 dBm of saturated output power with power gain of 21 dB at 3 GHz. The maximum power added efficiency is 73.3% which makes the TGF2023-2-02 appropriate for high efficiency applications. The part is lead-free and RoHS compliant. Typical Applications Broadband Wireless Military Space Product Categories Products> Discrete Transistors> GaN HEMTs Application Categories Applications> Defense & Aerospace> Communications Applications> Defense & Aerospace> Electronic Warfare Applications> Defense & Aerospace> Radar
- CLF1G0060S-10
GaN Transistors
CLF1G0060S-10
- TGF2819-FS
GaN Transistors
- TGF2819-FL
GaN Transistors
- RAA226110
GaN Transistors
- PGA26E34HA
GaN Transistors
- PGA26E19BA
GaN Transistors
- PGA26E17BA
GaN Transistors
- PGA26E07BA
GaN Transistors
- PGA26E06BA
GaN Transistors
- NXG2EA120R290
GaN Transistors
- NXG2EA120R170
GaN Transistors
- NXG2EA120R085
GaN Transistors
- NXG2EA070R290
GaN Transistors
- NXG2EA070R170
GaN Transistors
- NXG2EA070R085
GaN Transistors
- NV6252
GaN Transistors
- MGFS39G38L2
GaN Transistors
- MGFC50G5867
GaN Transistors
- LMG3522R030-Q1
GaN Transistors
