QorvoUnited States
Qorvo's TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC to 18 GHz. The TGF2023-2-02 typically provides 40.1 dBm of saturated output power with power gain of 21 dB at 3 GHz. The maximum power added efficiency is 73.3% which makes the TGF2023-2-02 appropriate for high efficiency applications. The part is lead-free and RoHS compliant. Typical Applications Broadband Wireless Military Space Product Categories Products> Discrete Transistors> GaN HEMTs Application Categories Applications> Defense & Aerospace> Communications Applications> Defense & Aerospace> Electronic Warfare Applications> Defense & Aerospace> Radar
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View full reportTechnical parameters
| AC and DC characteristics | |
|---|---|
| Frequency Max(MHz) | 18,000 |
| Frequency Min(MHz) | DC |
| Gain(dB) | 21 |
| Environment and package | |
| Halogen Free | Yes |
| Package(mm) | N/A |
| Package Type | Die |
| RoHS | Yes |
| Other | |
| Drain Efficiency(%) | N/A |
| ECCN | EAR99 |
| Idq(mA) | 50 to 250 |
| ITAR Restricted | No |
| Lead Free | Yes |
| PAE(%) | 73.3 |
| Psat(dBm) | 40.1 |
| Type | Un-matched |
| Vd(V) | 12 to 32 |