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View full reportTechnical parameters
| Power | |
|---|---|
| IDM-脉冲电流 | 12A |
| ID-最大漏极电流 | 9.4A |
| VDSS-最大漏源电压 | 650V |
| Vgs(th)-门槛电压 | 1.6V |
| AC and DC characteristics | |
| RDS(on)-漏源导通阻抗 | 340mΩ |
| Environment and package | |
| 封装类型1 | DFN8*8 |
| Other | |
| Ciss-输入等效电容 | 80pF |
| Pd-功率耗散 | 62W |
| Qg-栅极电荷 | 1nC |
| 引脚数量1 | 8 |
| 栅源耐压Vgs- | 10V |
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