Результаты поиска:VBE1307

台积电流片，长电科技封装；是一款单N沟道场效应晶体管，设计用于各种功率控制和驱动应用。采用Trench工艺，适用于各种功率控制和驱动应用，包括电源模块、马达驱动模块、照明控制模块等领域TO252；N—Channel沟道,30V；80A；RDS(ON)=5mΩ@VGS=10V,VGS=±20V；Vth=1~2.5V；

The VBE1307A is a single N-channel field effect transistor designed for various power control and drive applications. Its main parameters include: - Rated drain-source voltage (VDS) is 30V, suitable for medium power applications. - Maximum gate-source voltage (VGS) is 20V, providing a wide operating range. - The threshold voltage (Vth) is 1.7V, suitable for low-voltage drive circuits. - The on-resistance is 9mΩ when VGS=4.5V and 6mΩ when VGS=10V. It has low on-resistance and is suitable for high-efficiency power control. - Maximum drain current (ID) is 75A, with high power handling capability. - Using Trench technology, it has excellent electrical characteristics and reliability. VBE1307A has a variety of features and can be applied to various power control and drive applications, including power modules, motor drive modules, lighting control modules and other fields.