WeEn SemiconductorsНидерланды
DUAL SILICON CARBIDE SCHOTTKY DI
Все аналоги
Полный отчётТехнические параметры
| Питание | |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 30A |
| Current - Reverse Leakage @ Vr | 100 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 30 A |
| Условия эксплуатации и корпус | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | 175°C |
| Package | Tube |
| Package / Case | TO-247-2 |
| Supplier Device Package | TO-247-2 |
| Другое | |
| Base Product Number | WNSC2 |
| Diode Configuration | 1 Independent |
| Diode Type | Silicon Carbide Schottky |
| Mfr | WeEn Semiconductors |
| Product Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Series | - |
| Speed | No Recovery Time > 500mA (Io) |