DIODE GEN PURP 800V 200A 3 TOWER
Все аналоги
Полный отчётТехнические параметры
| Питание | |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 200A |
| Current - Reverse Leakage @ Vr | 10 µA @ 800 V |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 200 A |
| Условия эксплуатации и корпус | |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction | -55°C~150°C |
| Package | Bulk |
| Package / Case | Three Tower |
| Supplier Device Package | Three Tower |
| Другое | |
| Base Product Number | MSRT20080 |
| Diode Configuration | 1 Pair Series Connection |
| Diode Type | Standard |
| Mfr | GeneSiC Semiconductor |
| Product Status | Active |
| Series | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
Изображения
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