Infineon TechnologiesГермания
MOSFET N-CH 55V 5.1A
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Технические параметры
| Питание | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.1A |
| Drain to Source Voltage (Vdss) | 55V |
| Power - Max | 2.4W |
| Условия эксплуатации и корпус | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~175°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Другое | |
| Base Product Number | IRF7341 |
| FET Feature | Standard |
| FET Type | 2 N-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 780pF @ 25V |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 5.1A, 10V |
| Series | HEXFET® |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |