Taiwan Semiconductor CorporationТайвань, Китай
DIODE GEN PURP 1KV 3A DO201AD
Все аналоги
Полный отчётТехнические параметры
Основные параметры
Обратное напряжение1 kV
Средний выпрямленный ток3 A
Прямое падение напряжения1.7 VМакс. · 3 A
ТипStandardFast Recovery =< 500ns，> 200mA (Io)
| Питание | |
|---|---|
| Current - Average Rectified (Io) | 3A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1000 V |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 3 A |
| Условия эксплуатации и корпус | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Package | Cut Tape (CT) Tape & Box (TB) |
| Package / Case | DO-201AD, Axial |
| Supplier Device Package | DO-201AD |
| Другое | |
| Base Product Number | HER308 |
| Capacitance @ Vr, F | 35pF @ 4V, 1MHz |
| Mfr | Taiwan Semiconductor Corporation |
| Product Status | Active |
| Reverse Recovery Time (trr) | 75 ns |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Standard |