Rohm SemiconductorЯпония
TRANS 2PNP PREBIAS 0.15W EMT6
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Технические параметры
| Питание | |
|---|---|
| Current - Collector Cutoff (Max) | - |
| Current - Collector (Ic) (Max) | 100mA |
| Power - Max | 150mW |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Характеристики по постоянному и переменному току | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Frequency - Transition | 250MHz |
| Условия эксплуатации и корпус | |
| Mounting Type | Surface Mount |
| Package | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | EMT6 |
| Другое | |
| Base Product Number | EMB4T2 |
| Mfr | Rohm Semiconductor |
| Product Status | Active |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | - |
| Series | - |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |