MOSFET DUAL N-CHANNEL
Все аналоги
Полный отчётВ базе аналогов: 1. Войдите, чтобы посмотреть.
Технические параметры
| Питание | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Power - Max | 1.65W |
| Условия эксплуатации и корпус | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Bulk |
| Package / Case | 8-TDFN Exposed Pad |
| Supplier Device Package | TLM832DS |
| Другое | |
| FET Feature | Standard |
| FET Type | 2 N-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 590pF @ 10V |
| Mfr | Central Semiconductor Corp |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 1.8A, 4.5V |
| Series | - |
| Vgs(th) (Max) @ Id | 1.25V @ 250µA |