Results forMJD127T4G-HXY
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- MJD127T4G-HXY
Bipolar Transistors - Unspecified Type
此款达林顿管采用TO-252-2L封装,是一款高性能PNP型双极功率晶体管。拥有100V的集射极击穿电压(Vceo)及8A的最大集电极电流(Ic),额定功率耗散为1.5W。其具有超低饱和电压,在8A集电极电流和80mA基极电流时,VCE(sat)仅为4V,确保高效能运行。此外,该器件在4A/4V条件下提供出色的直流电流增益,hFE范围介于1000至12000之间。适用于通用放大器设计以及低速开关应用场合,以其卓越的电气参数与稳定性能,满足各类中高功率电路需求。
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