Results forMJD127
47 partsProduct search results47 total
- MJD127
Transistors - Bipolar (BJT) - Single
TRANS DARL PNP 8A 100V DPAK
- MJD127
Single Bipolar Transistors
PNP 集电极—发射极电压(Vceo)：-100V 集电极电流(Ic)：-5A 功率(Pd)：65W 集电极-发射极饱和电压(VCE(sat1)@Ic,Ib)：-2V@-3A,-12mA 直流电流增益(hFE@Ic,Vce)：1000@-0.5A,-3V，工作温度：+150℃@(Tj)
- MJD127
Single Bipolar Transistors
PNP,Vceo=-100V,Ic=-8A
- MJD127
Single Bipolar Transistors
- MJD127
Single Bipolar Transistors
- MJD127
Bipolar Transistors - Unspecified Type
适用于通用放大器和低速开关应用。
- MJD127
Bipolar Transistors - Unspecified Type
PNP高功率双极晶体管，环氧符合UL 94V - 0阻燃等级，无卤，高直流电流增益
- MJD127
Single Bipolar Transistors
达林顿类型：PNP。 集电极电流IC:-5A 集电极-基极击穿电压VCBO:-100V 集电极-发射极击穿电压VCEO:-100V
- MJD127
Single Bipolar Transistors
- MJD127
Single Bipolar Transistors
该PNP型三极管额定集电极电流（IC）为8A，集射极击穿电压（VCEO）达100V，具备较强的电流承载能力。直流电流增益（HFE）范围为1000至12000，属于高增益类型，可在微弱基极电流下实现高效电流控制，适用于精密开关与信号放大电路。器件采用大电流设计，热稳定性较好，适合在电源调节模块、继电器驱动、电机控制及高增益放大电路中使用。其高HFE特性有助于简化前级驱动设计，提升系统响应精度，满足多种中功率模拟与数字应用需求。【联系：sales@hxymos.com】
- MJD127
Single Bipolar Transistors
MJD127 TO-252双极晶体管
- MJD127
Single Bipolar Transistors
功率达林顿晶体管
- MJD127G
Transistors - Bipolar (BJT) - Single
TRANS PNP DARL 100V 8A DPAK
- MJD127T4
Transistors - Bipolar (BJT) - Single
TRANS DARL PNP 8A 100V DPAK
- MJD127T4
Transistors - Bipolar (BJT) - Single
TRANS PNP DARL 100V 8A DPAK
- MJD127TF
Transistors - Bipolar (BJT) - Single
TRANS PNP DARL 100V 8A DPAK
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