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  • G1008B

    Transistors - FETs, MOSFETs - Single

    类型：N+N沟道 漏源电压(Vdss)：100V 连续漏极电流(Id)：8A 阈值电压(Vgs(th))：2.5V 导通电阻(RDS(on)@Vgs：99mΩ@10V 封装：SOP-8 Dual

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