Results forFDD4141

POWER FIELD-EFFECT TRANSISTOR, 5

MOSFET P-CH 40V 10.8A/50A DPAK

【联系：sales@hxymos.com】该P沟道场效应管（MOSFET）具备40V漏源击穿电压，支持50A连续漏极电流，导通电阻典型值为10mΩ。低导通损耗特性使其在电池保护、负载开关及电源管理电路中表现优异，适用于对空间与效率有严格要求的便携式设备供电方案，可实现高效电流控制与热性能优化。

MOSFET P-CH 40V 10.8A/50A DPAK

MOSFET P-CH 40V 10.8A/50A TO252

MOSFET P-CH 40V 10.8A/50A TO252

台积电流片，长电科技封装；是一款单路P型MOSFET，采用Trench工艺，适用于需要P型MOSFET的高功率、高性能和高可靠性电子模块中，为各种应用场景提供可靠的电力控制和管理解决方案。TO252；P—Channel沟道,-40V；-50A；RDS(ON)=12mΩ@VGS=10V,VGS=20V；Vth=-1~-3.5V；

【联系：sales@hxymos.com】该P沟道场效应管（MOSFET）最大漏极电流为50A，漏源击穿电压40V，导通电阻低至10mΩ。其低导通损耗特性有助于提升电源转换效率并减少发热，适用于高电流负载开关、电池保护电路及便携式设备的电源管理模块。该器件在有限空间内提供可靠的功率控制能力，适合对能效和热性能有严格要求的紧凑型电子系统设计。

This P-Channel MOSFET has been produced using a proprietary PowerTrench ® technology to deliver low r DS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications. Product services, tools and other useful resources related to FDD4141_F085 Find and compare products, get support and connect with onsemi sales team. Note: The temperature and confidence level may be adjusted to your requirements. Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

该P沟道场效应管最大漏极电流为50A，漏源击穿电压40V，导通电阻典型值10mΩ。其低阻抗特性显著降低导通损耗，适用于高电流负载开关、电池组保护电路及电源极性反接防护模块。在直流电源分配系统中，它能有效简化驱动电路设计并减少发热；亦常用于便携式电子设备的电源管理单元，满足大电流切换下对能效与空间布局的严格要求。