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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage-40 V
Continuous drain current10.8 ~ 50 A
On-resistance12.3 mΩMax · 12.7A
Gate threshold voltage3 VMax · 250μA

Datasheet-verified parameters

13 items
ParameterValue and test conditionsSource
ChannelP-Channel
Drain to Source Voltage-40 V
Drain Current -Continuous (Package limited)-50 A at TC=25°C
RDS(on)Max 12.3 mΩ at VGS = -10 V, ID = -12.7 A
PackageD-PAK (TO-252)
Operating and Storage Junction Temperature Range-55 to +150 °C
RoHS CompliantCompliant
Gate to Source Voltage±20 V
Drain Current -Pulsed-100 A
Single Pulse Avalanche Energy337 mJ
Power Dissipation69 W at TC=25°C
Thermal Resistance, Junction to Case1.8 °C/W
Thermal Resistance, Junction to Ambient52 °C/W
All parameters (20)ExpandCollapse
Power
Current - Continuous Drain (Id) @ 25°C10.8A (Ta), 50A (Tc)
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2.4W (Ta), 69W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageBulk
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252, (D-Pak)
Other
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2775 pF @ 20 V
MfrFairchild Semiconductor
Product StatusActive
Rds On (Max) @ Id, Vgs12.3mOhm @ 12.7A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Documents

Datasheet-verified content is extracted by AI from the manufacturer datasheet. Click a page number to view the original.