Results forE080N020HL1

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  • E080N020HL1

    Transistors - FETs, MOSFETs - Single

    1个N沟道漏源电压(Vdss):80V连续漏极电流(Id):35A功率(Pd)35W阈值电压(Vgs(th)@Id):2V@250uA导通电阻(RDS(on)@Vgs,Id):20mΩ@10V栅极电荷(Qg@Vgs)13nC@10V输入电容(Ciss@Vds)792pF@25V工作温度-55 ℃~+ 175℃@(Tj)

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