Existar(毅芯达)China
E080N020HL1
Transistors - FETs, MOSFETs - Single1个N沟道漏源电压(Vdss):80V连续漏极电流(Id):35A功率(Pd)35W阈值电压(Vgs(th)@Id):2V@250uA导通电阻(RDS(on)@Vgs,Id):20mΩ@10V栅极电荷(Qg@Vgs)13nC@10V输入电容(Ciss@Vds)792pF@25V工作温度-55 ℃~+ 175℃@(Tj)
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage80 V
Continuous drain current35 A
On-resistance20 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 80V |
| 连续漏极电流(Id) | 35A |
| Other | |
| 导通电阻(RDS(on)) | 20mΩ@10V |
| 数量 | 1个N沟道 |