Results forBSS138PW-HXY

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  • BSS138PW-HXY

    Transistors - FETs, MOSFETs - Single

    该N沟道场效应管额定漏极电流0.1A,漏源击穿电压60V,导通电阻1300毫欧,栅源耐压20V。器件适用于低压开关与信号切换场景,如便携设备电源管理、电池保护及负载控制电路。其60V耐压支持中等电压应用,1300毫欧导通电阻有助于降低功耗,适合对空间与能效有要求的消费电子及通信模块设计。

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