Results forBSS138PW,115
6 partsProduct search results6 total
- BSS138PW,115
Single FETs, MOSFETs
MOSFET N-CH 60V 320MA SOT323
- BSS138PW,115
Transistors - FETs, MOSFETs - Single
MOSFET N-CH 60V 320MA SOT323
- BSS138PW,115
Single FETs, MOSFETs
【联系：sales@hxymos.com】该N沟道场效应管额定漏极电流为0.1安培，漏源击穿电压60伏，导通电阻1300毫欧，栅源电压耐受值20伏。器件适用于低压信号切换及小功率负载驱动场景，常见于便携式仪器电源管理、电池保护回路及小型控制模块。其参数特性支持在紧凑电路设计中实现高效的开关控制，满足对空间布局与基础电气性能有明确要求的电子设备应用需求。
- BSS138PW,115-VB
Transistors - FETs, MOSFETs - Single
N沟道；电压：60V；电流：0.3A；导通电阻：2000(mΩ)
- BSS138PW,115(ES)
Transistors - FETs, MOSFETs - Single
- BSS138PW,115-JSM
Transistors - FETs, MOSFETs - Single
漏源电压(Vdss)：50V 连续漏极电流(Id)：360mA 导通电阻(RDS(on))：2.5Ω@4.5V,0.2A 耗散功率(Pd)：260mW 阈值电压(Vgs(th))：4.5V@250uA
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