SIS932EDN-T1-GE3
FET, MOSFET ArraysMOSFET 2N-CH 30V 6A PPAK 1212
Все аналоги
Полный отчётТехнические параметры
| Питание | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Drain to Source Voltage (Vdss) | 30V |
| Power - Max | 2.6W (Ta), 23W (Tc) |
| Условия эксплуатации и корпус | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | PowerPAK® 1212-8 Dual |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
| Другое | |
| Base Product Number | SIS932 |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 15V |
| Manufacturer | Vishay Siliconix |
| Packaging | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Part Status | Active |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 10A, 4.5V |
| Series | TrenchFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |