The LFx5x devices are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.
Все аналоги
Полный отчётТехнические параметры
| Питание | |
|---|---|
| Input bias current (max) (pA) | 100 |
| Input common mode headroom (to negative supply) (typ) (V) | 3 |
| Input common mode headroom (to positive supply) (typ) (V) | 0.1 |
| Iq per channel (typ) (mA) | 5 |
| Number of channels | 1 |
| Output swing headroom (to negative supply) (typ) (V) | 2 |
| Output swing headroom (to positive supply) (typ) (V) | -2 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) | 44 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) | 10 |
| Характеристики по постоянному и переменному току | |
| CMRR (typ) (dB) | 100 |
| Offset drift (typ) (µV/°C) | 5 |
| Slew rate (typ) (V/µs) | 12 |
| Vos (offset voltage at 25°C) (max) (mV) | 5 |
| Условия эксплуатации и корпус | |
| Operating temperature range (°C) | -25 to 85 |
| Другое | |
| Architecture | FET |
| GBW (typ) (MHz) | 5 |
| Iout (typ) (A) | 0.025 |
| Rail-to-rail | No |
| Rating | Military |
| Vn at 1 kHz (typ) (nV√Hz) | 12 |