Taiwan Semiconductor CorporationТайвань, Китай
DIODE GEN PURP 800V 1A THIN SMA
Все аналоги
Полный отчётТехнические параметры
Основные параметры
Обратное напряжение800 V
Средний выпрямленный ток1 A
Прямое падение напряжения1.7 VМакс. · 1 A
ТипStandardFast Recovery =< 500ns，> 200mA (Io)
| Питание | |
|---|---|
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 1 µA @ 800 V |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 1 A |
| Условия эксплуатации и корпус | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | DO-221AC, SMA Flat Leads |
| Supplier Device Package | Thin SMA |
| Другое | |
| Base Product Number | HS1K |
| Capacitance @ Vr, F | 8pF @ 4V, 1MHz |
| Mfr | Taiwan Semiconductor Corporation |
| Product Status | Active |
| Reverse Recovery Time (trr) | 75 ns |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Standard |