HFA3127B96-HC
Bipolar RF TransistorsRF 0.037A, 5-ELEMENT, ULTRA HIGH
Все аналоги
Полный отчётТехнические параметры
| Питание | |
|---|---|
| Current - Collector (Ic) (Max) | 65mA |
| Power - Max | 150mW |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Характеристики по постоянному и переменному току | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 2V |
| Frequency - Transition | 8GHz |
| Gain | - |
| Noise Figure (dB Typ @ f) | 3.5dB @ 1GHz |
| Условия эксплуатации и корпус | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Package / Case | 16-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 16-SOIC |
| Другое | |
| Manufacturer | Harris Corporation |
| Packaging | Bulk |
| Part Status | Active |
| Series | - |
| Transistor Type | 5 NPN |