Results forTW123V65C

2 parts

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  • TW123V65C

    Single FETs, MOSFETs

    The TW123V65C is a Toshiba MOSFETs product. N-ch SiC MOSFET, 650 V, 0.123 Ω(typ.)@18 V, DFN 8×8, 3rd Gen. Switching regulators｜ Find data sheet and product information from the product details page.

    Datasheet7View details
  • TW123V65C,LQ

    Single FETs, MOSFETs

    【联系：sales@hxymos.com】该N沟道碳化硅MOSFET具有37A的连续漏极电流和650V的漏源击穿电压，导通电阻为94mΩ，在栅源电压范围-10V至+25V内稳定工作。器件利用碳化硅材料特性，在高频、高效率电力转换场景中表现出优异的开关性能与热稳定性，适用于对能效和功率密度有较高要求的电源系统，如服务器电源、可再生能源逆变器及高频率开关电源等应用场合。

    Datasheet1View details
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