Results forTK110Z65Z,S1F

2 parts

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  • TK110Z65Z,S1F

    Transistors - FETs, MOSFETs - Single

    POWER MOSFET TRANSISTOR TO-247-4

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  • TK110Z65Z,S1F

    Single FETs, MOSFETs

    【联系：sales@hxymos.com】该N沟道碳化硅MOSFET具有36A的连续漏极电流和650V的漏源击穿电压，导通电阻为75mΩ，栅源电压工作范围为-8V至+20V。器件利用碳化硅材料的高击穿场强与热导率优势，在高频开关条件下仍能保持较低的导通与开关损耗，适用于对效率、热性能及空间布局要求较高的电源转换系统。其参数特性支持在严苛电气环境中实现稳定可靠的运行。

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