Results forTK110N65Z,S1F

2 parts

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  • TK110N65Z,S1F

    Transistors - FETs, MOSFETs - Single

    POWER MOSFET TRANSISTOR TO-247(O

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  • TK110N65Z,S1F

    Single FETs, MOSFETs

    【联系：sales@hxymos.com】该N沟道碳化硅MOSFET具有32A的连续漏极电流和650V的漏源击穿电压，导通电阻典型值为94mΩ，在栅源电压范围-10V至+25V内稳定工作。器件利用碳化硅材料特性，在高频开关条件下仍能保持较低的导通与开关损耗，适用于对效率和热管理要求较高的电力转换场景。其低RDS(ON)有助于减小导通功耗，提升系统整体能效，同时宽VGS耐压范围增强了驱动兼容性与可靠性。

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