Results forTK110E65Z,S1X

2 parts

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  • TK110E65Z,S1X

    Transistors - FETs, MOSFETs - Single

    650V DTMOS VI TO-220 110MOHM

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  • TK110E65Z,S1X

    Single FETs, MOSFETs

    【联系：sales@hxymos.com】该N沟道碳化硅MOSFET具有30A的连续漏极电流和650V的漏源击穿电压，导通电阻典型值为94mΩ，在栅源电压范围-10V至+25V内稳定工作。器件采用碳化硅材料，具备优异的高频特性和高温稳定性，适用于高效率电源转换、可再生能源系统及高频开关应用。其低导通损耗与快速开关能力有助于提升整体系统能效与功率密度。

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