Results forSTW34N65M5
4 partsProduct search results4 total
- STW34N65M5
Transistors - FETs, MOSFETs - Single
MOSFET N-CH 650V 28A TO247
- STW34N65M5
Single FETs, MOSFETs
MOSFET N-CH 650V 28A TO247
- STW34N65M5-VB
Transistors - FETs, MOSFETs - Single
台积电流片，长电科技封装；TO247；N—Channel沟道；650V；47A；RDS(ON)=50(mΩ)；VGS=±30V；Vth=3.5V；采用SJ_Multi-EPI技术；
- STW34N65M5-HXY
Single FETs, MOSFETs
该碳化硅场效应管为N沟道结构，额定漏极电流ID为32A，最大漏源电压VDSS达650V，导通电阻RDS(ON)为94mΩ，栅源驱动电压范围为-10V至+25V。器件采用碳化硅材料，具备高耐压、低导通损耗及优异的高温工作能力，适用于对效率和功率密度要求较高的电力转换场景，可有效提升系统整体性能与可靠性。
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