Results forSI2306BDS-T1-E3-VB
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- SI2306BDS-T1-E3-VB
Transistors - FETs, MOSFETs - Single
台积电流片，长电科技封装；SOT-23；N—Channel沟道,30V；5A；RDS(ON)=47mΩ@VGS=10V,VGS=20V；Vth=0.7~2V；这是一款单路N沟道MOSFET，采用Trench工艺，适用于低功率功率控制和开关应用。
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