Results forG2306

3 parts

Product search results3 total

  • G2306

    Transistors - FETs, MOSFETs - Single

    商品目录 场效应管(MOSFET)；类型 1个N沟道；漏源电压(Vdss) 30V；连续漏极电流(Id) 3.16A；功率(Pd) 750mW；导通电阻(RDS(on)@Vgs,Id) 47mΩ@10V,3.5A 阈值电压(Vgs(th)@Id) 3V@250uA

    Datasheet3View details
  • G2306-VB

    Transistors - FETs, MOSFETs - Single

    SOT23；N—Channel沟道,20V；6A；RDS(ON)=28mΩ@VGS=4.5V,VGS=12V；Vth=0.45~1V；

    Datasheet1View details
  • G2306A-VB

    Transistors - FETs, MOSFETs - Single

    台积电流片，长电科技封装；这是一款单通道N沟道场效应晶体管（单N），采用Trench工艺制造。适用于需要高性能、高可靠性的电子系统，如电源管理、电动工具和汽车电子等领域的模块中。SOT23；N—Channel沟道,30V；6.5A；RDS(ON)=30mΩ@VGS=10V,VGS=20V；Vth=0.7~2V；

    Datasheet1View details
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