Results forFP2189

IC RF HFET 1W SOT-89

Qorvo's FP2189-G is a high performance 1 Watt HFET (Heterostructure FET) in a low-cost SOT-89 surface mount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1-dB compression, while providing 18.5 dB gain at 900 MHz. The device conforms to Qorvo's long history of producing high reliability and quality components. The FP2189-G has an associated MTTF of greater than 100 years at a mounting temperature of 85 °C and is available in both the standard SOT-89 package and the environmentally-friendly lead-free / green / RoHS-compliant SOT-89 package. All devices are 100% RF and DC tested. The product is targeted for use as driver amplifiers for wireless infrastructure where high performance and high efficiency are required. Typical Applications CATV / DBS Defense / Homeland Security Fixed Wireless Industrial, Scientific and Medical (ISM) Mobile Infrastructure