Results forFDD4141-F085P-HXY
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- FDD4141-F085P-HXY
Transistors - FETs, MOSFETs - Single
该P沟道场效应管最大漏极电流为50A,漏源击穿电压40V,导通电阻典型值10mΩ。其低阻抗特性显著降低导通损耗,适用于高电流负载开关、电池组保护电路及电源极性反接防护模块。在直流电源分配系统中,它能有效简化驱动电路设计并减少发热;亦常用于便携式电子设备的电源管理单元,满足大电流切换下对能效与空间布局的严格要求。
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