NXP USA Inc.

Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage(VGS)information is provided for matched pair applications. Refer to the General section of Data Handbook SC19a for further information.

四通道PIN二极管衰减器

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage(VGS)groups are available on request.

The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.

The A2T27S020NR1 and A2T27S020GNR1 2.5 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 400 to 2700 MHz.

A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band.

The PCF85163 is a CMOS1 Real-Time Clock (RTC) and calendar optimized for low power consumption. A programmable clock output, interrupt output, and voltage-low detector are also provided. All addresses and data are transferred serially via a two-line bidirectional I2C-bus. Maximum bus speed is 400 kbit/s. The register address is incremented automatically after each written or read data byte.

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.