DDF(鼎德丰)

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  • 2P4M(1)(1)(1)(1)

    General/Unspecified ICs

    GENERAL DESCRIPTIONOB6683 integrates a transition mode power factor correction (TM PFC) controller and a Quasi-Resonant (QR) controller in one chip. The PFC controller provides a cost effective solution for optimizing the power factor. The QR controller provides higher efficiency and lower EMI compared to conventional PWM system.OB6683 provides high level integration and high performance than conventional PFC/PWM system. The built-in TM PFC controller optimizes power conversion efficiency with reduced system cost. The intelligent PFC switching ON and OFF, zero current detection and frequency limitation mechanism enable a better efficiency under any load conditions.OB6683 features many built-in green functions to optimize power conversion efficiency at all power levels. This holds for QR operation at high power levels, as well as PFM operation at lower power levels, and ‘Extended Burst Mode’ operation at very low power or zero power (Standby) levels. At low power levels, OB6683G can turn off the PFC stage. In this way, low standby together with low system cost can be achieved.The device is also integrated many functions of protection, such as X-CAP discharge, Brown-in/out protection, VCC Under Voltage Lockout (UVLO), Cycle-by-Cycle Current Limiting for PFC and QR Stage (OCP), Output Over Voltage Protection for PFC and QR Stage (OVP), Open Loop Protection for PFC and QR Stage (OLP), Programmable Over Temperature Protection (OTP), Built-in Soft Start in QR Stage, VCC Over Voltage Protection, Gate Clamp , Pin Floating Protection, and External Latch Triggering, etc. Therefore it can protect the system from damage due to occasional failure.OB6683 is offered in SOP-16 packages.FEATURES■ Integrated PFC Controller and QR Controller■ Transition Mode PFC Controller■ Multi-Mode Operation for QR Stage■ Line Voltage Compensation for QR Stage■ Enhanced Dynamic Response for PFC Stage■ PFC Light Load Turn Off Control■ Audio Noise Free Operation■ Valley Switching Operation with Valley lockout■ External Latch Triggering for Both Converters■ Minimum OFF time for Ringing Suppression■ Maximum ON Time Limit for QR Stage■ Built-in 4ms Soft Start for QR Stage■ Internal Leading Edge Blanking for QR Stage■ Internal Leading Edge Blanking for PFC Stage■ Built-in X-CAP Discharge PROTECTIONS■ Output Over Voltage Protection for PFC stage■ Output Over Voltage Protection for QR stage■ Output Diode Short Protection for QR stage■ VCC Over Voltage Protection■ Under Voltage Lockout with Hysteresis■ Over Load Protection for QR stage■ Cycle-by-Cycle Current Limiting for PFC stage■ Cycle-by-Cycle Current Limiting for QR stage■ Brownout Protection (BOP)■ PFC Inductor Short Circuit Protection■ Programmable Over Temperature Protection■ Internal Over Temperature Protection APPLICATIONSOffline AC/DC flyback converter for■ General LED Lighting■ LCD Monitor/TV/PC■ Notebook■ ACDC High Power Adapter■ Open Frame SMPS TYPICAL APPLICATION

  • MCR100-6-SOT-89

    SCRs - Modules

    可控硅类型:单向可控硅。 断态峰值电压(VDRM/VRRM):400V 通态电流(IT(RMS)): 0.8A 浪涌电流(ITSM):8A 峰值通态压降(VTM): 1.7 门极触发电流(IGT):10-30uA 结温(TJ):-40℃~+125℃

  • ULN2803A-SOP-18

    Bipolar Transistor Arrays, Pre-Biased

     500mA额定集电极电流(单路)  工作电压高(40V)  输入兼容TTL/CMOS逻辑信号  广泛应用于继电器驱动  封装形式:SOP18、DIP18和SSOP24

  • BT138S-600E

    SCRs - Modules

    可控硅类型:双向可控硅。 断态峰值电压(VDRM/VRRM):600V 通态电流(IT(RMS)):12A 浪涌电流(ITSM): 120A 峰值通态压降(VTM): 1.6 门极触发电流(IGT3):1-5mA 结温(TJ):-40℃~+125℃

  • BT138S-800E

    SCRs - Modules

    可控硅类型:双向可控硅。 断态峰值电压(VDRM/VRRM):800V 通态电流(IT(RMS)):12A 浪涌电流(ITSM): 120A 峰值通态压降(VTM): 1.6 门极触发电流(IGT3):1-5mA 结温(TJ):-40℃~+125℃

  • BTB16

    SCRs - Modules

    可控硅类型:双向可控硅。 断态峰值电压(VDRM/VRRM):800V 通态电流(IT(RMS)):16A 浪涌电流(ITSM): 160A 峰值通态压降(VTM): 1.55 门极触发电流(IGT3):<20mA 结温(TJ):-40℃~+125℃

  • BT131-600-SOT-223

    SCRs - Modules

    可控硅类型:双向可控硅。 断态峰值电压(VDRM/VRRM):600V 通态电流(IT(RMS)):1A 浪涌电流(ITSM): 16A 峰值通态压降(VTM): 1.4 门极触发电流(IGT3):1-3mA 结温(TJ):-40℃~+125℃

  • KBJ1008

    Bridge Rectifiers

    描述: 100MIL 正向压降(Vf): 1.1V@10A 直流反向耐压(Vr):800V 整流电流: 10A 非重复峰值浪涌电流 (Ifsm):200A 工作结温范围:-55℃~+150℃@(TJ)

  • KBJ1006

    Bridge Rectifiers

    描述: 100MIL 正向压降(Vf): 1.1V@10A 直流反向耐压(Vr):600V 整流电流: 10A 非重复峰值浪涌电流 (Ifsm):200A 工作结温范围:-55℃~+150℃@(TJ)

  • 13005-TO-220

    Bipolar Transistors - Unspecified Type

    晶体管类型:高压NPN。 集电极电流ICM:4A 集电极-基极击穿电压BVCBO:700V 集电极-发射极击穿电压BVCEO:480V 直流电流增益HFE:20-25

  • BD442

    Bipolar Transistors - Unspecified Type

    晶体管类型:PNP。 集电极电流ICM:-7A 集电极-基极击穿电压BVCBO:-80V 集电极-发射极击穿电压BVCEO:-80V 直流电流增益HFE:200-300

  • Z0107-SOT-89

    SCRs - Modules

    可控硅类型:双向可控硅。 断态峰值电压(VDRM/VRRM):600V 通态电流(IT(RMS)):1A 浪涌电流(ITSM): 10A 峰值通态压降(VTM): 1.6 门极触发电流(IGT3):1-3mA 结温(TJ):-40℃~+125℃

  • MCR100-6-TO-92

    SCRs - Modules

    可控硅类型:单向可控硅。 断态峰值电压(VDRM/VRRM):400V 通态电流(IT(RMS)): 0.8A 浪涌电流(ITSM):8A 峰值通态压降(VTM): 1.7 门极触发电流(IGT):10-30uA 结温(TJ):-40℃~+125℃

  • MJD122

    Single Bipolar Transistors

    达林顿类型:NPN。 集电极电流IC:5A 集电极-基极击穿电压VCBO:100V 集电极-发射极击穿电压VCEO:100V

  • MJD127

    Single Bipolar Transistors

    达林顿类型:PNP。 集电极电流IC:-5A 集电极-基极击穿电压VCBO:-100V 集电极-发射极击穿电压VCEO:-100V

  • A1

    Single Diodes

    描述: 46MIL 正向压降(Vf): 1V@0.8A 直流反向耐压(Vr): 50V 整流电流: 0.8A 非重复峰值浪涌电流 (Ifsm):30A 工作结温范围:-55℃~+150℃@(TJ)

  • TP4054M-SOT23-5

    Battery Management

    高达 800mA 的可编程充电电流。 无需 MOSFET、检测电阻器或隔离二极管。 用于单节锂离子电池、采用 SOT23-5 封装的完整线性充电器。 恒定电流/恒定电压操作,并具有热调节功能。 直接从 USB 端口给单节锂离子电池充电。 4.2V 预设充电电压。 C/10 充电终止;自动再充电。 充电状态输出引脚。 待机模式下的供电电流为 45uA。 2.9V 涓流充电器件版本。 软启动限制了浪涌电流。

  • Z0409

    SCRs - Modules

    可控硅类型:双向可控硅。 断态峰值电压(VDRM/VRRM):600V 通态电流(IT(RMS)):4A 浪涌电流(ITSM): 25A 峰值通态压降(VTM): 1.7 门极触发电流(IGT3):1-3mA 结温(TJ):-40℃~+125℃

  • M7555-SOP-8

    Programmable Timers and Oscillators

    低电源电流:80μA(典型值) 500KHz的稳态频率能力 最低工作电压4.5V 5V电压下,输出与TTL和CMOS逻辑电压完全兼容 输出转换期间电源电流尖峰低 极低的触发,阈值和复位电流:20pA(典型值) 在非稳定和单稳态模式下运行,可调节占空比 与555系列定时器引脚兼容 采用SOP8封装形式

  • BD679

    Single Bipolar Transistors

    达林顿类型:NPN。 集电极电流IC:4A 集电极-基极击穿电压VCBO:80V 集电极-发射极击穿电压VCEO:80V

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