Diodes IncorporatedUnited States
ZXMP6A18DN8
FET, MOSFET ArraysAll alternatives
View full reportTechnical parameters
| Power | |
|---|---|
| ID-最大漏极电流 | 4.8A |
| VDSS-最大漏源电压 | 60V |
| Vgs(th)-门槛电压 | 1V |
| AC and DC characteristics | |
| RDS(on)-漏源导通阻抗 | 55mΩ |
| Environment and package | |
| 封装类型1 | SO |
| Other | |
| Pd-功率耗散 | 2.1W |
| Qg-栅极电荷 | NnC |
| Vgs-栅源耐压 | 20V |
| 内置ESD保护二极管 | 0 |
| 内置整流二极管 | 0 |
| 引脚数量1 | 8 |