VBsemi(微碧半导体)China
ZXMC3A16DN8TC-VB
Transistors - FETs, MOSFETs - SingleSOP8；N+P—Channel沟道,±30V；8/-8A；RDS(ON)=18/32mΩ@VGS=10V,VGS=20V；Vth=±1~±2V；
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View full reportTechnical parameters
Key specs
Drain-source voltage30 V
Continuous drain current8 A
On-resistance50 mΩMax · 4.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 30V |
| 连续漏极电流(Id) | 8A |
| Other | |
| 导通电阻(RDS(on)) | 50mΩ@4.5V |
| 耗散功率(Pd) | 3.1W |