VBsemi(微碧半导体)China
WPM1480-3/TR-VB
Transistors - FETs, MOSFETs - SingleSC70-3；P—Channel沟道,-20V；-3.1A；RDS(ON)=80mΩ@VGS=4.5V,VGS=12V；Vth=-0.45~-1.5V；
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View full reportTechnical parameters
Key specs
Drain-source voltage20 V
Continuous drain current3.1 A
On-resistance100 mΩMax · 2.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 20V |
| 连续漏极电流(Id) | 3.1A |
| Other | |
| 导通电阻(RDS(on)) | 100mΩ@2.5V |
| 耗散功率(Pd) | 500mW |