WeEn SemiconductorsNetherlands
POWER SCHOTTKY DIODES
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 20A |
| Current - Reverse Leakage @ Vr | 50 µA @ 100 V |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 780 mV @ 20 A |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | 150°C |
| Package | Tube |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220E |
| Other | |
| Base Product Number | WNS40 |
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Schottky |
| Mfr | WeEn Semiconductors |
| Product Status | Active |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
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