ALJ(龙晶微)China
WNM6002-ALJ
Transistors - FETs, MOSFETs - Single特性:N-Channel (N沟道),耐压 60V,持续漏极电流 0.3A。采用超高密度电池设计和沟槽技术,优异的导通电阻以支持更高的直流电流。应用:继电器、电磁铁、电机等。
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