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Technical parameters

Power
VDSS-最大漏源电压30V
AC and DC characteristics
RDS(on)-漏源导通阻抗12mΩ
Environment and package
封装类型1DFN2x2
Other
Ciss-输入等效电容860pF
Pd-功率耗散1.8W
Qg-栅极电荷19.5nC
Vgs-栅源耐压20V
内置ESD保护二极管0
内置整流二极管0
引脚数量16

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