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Technical parameters

Key specs

Memory typeDRAM
Memory size4 Gbit
Supply voltage1.283 ~ 1.45 V
Clock frequency933 MHzMax

Datasheet-verified parameters

23 items
ParameterValue and test conditionsSource
Memory TypeDDR3L SDRAM
Capacity4G bits (32M × 8 BANKS × 16 BIT)
InterfaceDDR3L
Supply VoltageVDD, VDDQ: Min 1.283V, Typ 1.35V, Max 1.45V
Clock FrequencyMax 933 MHz (DDR3L-1866)
PackageVFBGA 96 Ball (9 x 13 mm², ball pitch: 0.8mm)
Operating Temperature-40°C ≤ TCASE ≤ 95°C
GradeIndustrial (11I)
RoHSRoHS compliant
Speed GradeDDR3L-1866 (13-13-13)
CAS Latency5, 6, (7), 8, (9), 10, (11), 13 nCK
Burst LengthBL8 and BC4
Number of Banks8
Prefetch Architecture8 bit prefetch
Refresh Interval7.8 μS (-40°C ≤ TCASE ≤ 85°C), 3.9 μS (85°C < TCASE ≤ 95°C)
Self-Refresh CurrentMax 28 mA (IDD6)
Operating Current (IDD0)Max 175 mA (DDR3L-1866)
Operating Current (IDD1)Max 205 mA (DDR3L-1866)
Absolute Maximum VoltageVDD, VDDQ: -0.4V ~ 1.975V
Storage Temperature-55°C ~ 150°C
External Calibration ResistorRZQ: Min 237.6Ω, Typ 240.0Ω, Max 242.4Ω
On-Die Termination ImpedanceRTT: 20Ω, 30Ω, 40Ω, 60Ω, 120Ω (Programmable)
Output Driver ImpedanceRON: 34Ω (RZQ/7), 40Ω (RZQ/6)
All parameters (7)ExpandCollapse
Environment and package
PackageVFBGA96
Other
Density32M × 8 BANKS × 16 BIT
Speed BinsDDR3L-1333, DDR3L-1600, DDR3L-1866, DDR3L-2133
TOPER-40 ~ 85 °C
TSTG-55 ~ 150 °C
VDD1.35 V (Typ)
VDDQ1.35 V (Typ)

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