VBsemi(微碧半导体)China
台积电流片，长电科技封装；是一款双N+P沟道场效应晶体管，采用Trench工艺，适用于电源管理模块、汽车电子系统、工业机器人、变频器和PLC等控制系统模块、家用电器控制器、LED驱动器等领域。SOP8；2个N—Channel沟道,60V；6A；RDS(ON)=28mΩ@VGS=10V,VGS=20V；Vth=1.5~2.5V；
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Technical parameters
Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current6 A
Gate threshold voltage1.5 VMax
| Power | |
|---|---|
| 漏源电压(Vdss) | 60V |
| 连续漏极电流(Id) | 6A |
| 阈值电压(Vgs(th)) | 1.5V |
| Other | |
| 数量 | 2个N沟道 |