VBsemi(微碧半导体)China
台积电流片，长电科技封装；是一款单体N型场效应管，采用Trench工艺，适合用于各种电源管理、电机驱动、和电力转换应用。SOP8；N—Channel沟道,30V；13A；RDS(ON)=8mΩ@VGS=10V,VGS=±20V；Vth=1~3V；
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Technical parameters
Key specs
ChannelN-channel
Drain-source voltage20 V
Continuous drain current10 A
| Power | |
|---|---|
| 漏源电压(Vdss) | 20V |
| 连续漏极电流(Id) | 10A |
| Other | |
| 数量 | 1个N沟道 |
| 耗散功率(Pd) | 2.2W |