onsemiUnited States
MOSFET 2P-CH 20V 1.9A SSOT6
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.9A |
| Drain to Source Voltage (Vdss) | 20V |
| Power - Max | 700mW |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | SuperSOT™-6 |
| Other | |
| Base Product Number | USB10 |
| FET Feature | Logic Level Gate |
| FET Type | 2 P-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 4.2nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 441pF @ 10V |
| Mfr | onsemi |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 1.9A, 4.5V |
| Series | PowerTrench® |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |